LITTELFUSE

The surface mount family of arrays designed to suppress ESD and other transient overvoltage events. These arrays are used to meet the International Electrotechnical Compatibility (IEC transient immunity standards IEC 61000-4-2 for Electrostatic Discharge Requirements). The series are used to help protect sensitive digital or analog input circuits on data, signal, or control lines with voltage levels up to 5VDC. The monolithic silicon arrays are comprised of specially designed structures for transient voltage suppression (TVS). The size and shape of these structures have been tailored for transient protection. The low capacitance and clamp voltage are ideal for high-speed signal line protection.

This surface mount family of arrays suppress ESD and other transient overvoltage events. Used to meet the International Electrotechnical Compatibility (IEC transient immunity standards IEC 61000-4-2 for Electrostatic Discharge Requirements), these components can help protect sensitive digital or analog input circuits on data, signal, or control lines with voltage levels up to 5VDC. The monolithic silicon arrays are comprised of specially designed structures for transient voltage suppression (TVS). The size and shape of these structures have be tailored for transient protection. Compared to MOVs, this diode array provides a lower clamping voltage and lower off-state capacitance.

This family of avalanche diode arrays are designed for ESD Protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or analog input circuits on data, signal, or control lines with unipolar voltage levels up to 5VDC. The state-of-the-art structure is designed to suppress ESD and other transient over-voltage events to meet the International Electrotechnical Compatibility (EMC transient immunity standards IEC 61000-4-2 for Electrostatic Discharge Requirements). The monolithic silicon devices are comprised of specially designed structures for transient voltage suppression (TVS). The size and shape of these structures has been tailored for transient protection. The low capacitance and clamp voltage are ideal for high-speed signal line protection.

This series is not recommended for new designs. Suggests to use SP1004U-ULC-04UTG / SP3420-04UTG commercial series or SESD1004Q4UG-0020-090 automotive grade series for the new designs in near future. SP0524PUTG has been qualified to AEC-Q101 and is appropriate for use in Automotive applications. The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust device can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as HDMI, USB3.0, USB2.0, and IEEE 1394.

The SP0544T integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust device can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One, HDMI, USB3.0, USB2.0, and IEEE 1394

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins.