Diodes Inc

This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

The ZXMS6001N3Q is a low input current self-protected low-side IntelliFET™ MOSFET intended for VIN = 5V applications. It features monolithic overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. It is intended as a general purpose switch.

The ZXMS6002G is a self-protected low-side IntelliFET™ MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp) and ESD-protected logic level functionality. It is intended as a general purpose switch, with status indication and programmable current limit.

The ZXMS6003G is a self-protected low-side IntelliFET™ MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp), and ESD protected logic level functionality. It is intended as a general purpose switch with status indication and programmable current limit.

Diodes Incorporated announces the introduction of the ZXMS6004N8Q and ZXMS6004DN8Q, each housed in the automotive standard molded plastic SO-8 case. These are parts within the N-channel IntelliFET series. The ZXMS6004N8Q is a single-channel self-protected low-side IntelliFET with logic level input. The ZXMS6004DN8Q is the dual-channel version of ZXMS6004N8. Both parts are qualified to AEC-Q101 with short-circuit reliability characterization and are provide PPAP capability.

The ZXMS6004SGQ is a self protected low side IntelliFET™ MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004SGQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

The ZXMS6005DGQ-13 is a self protected low side IntelliFET MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DGQ-13 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

The ZXMS6006DN8 is a dual self-protected low-side IntelliFET® MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6006DN8 is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.