Diodes Inc

This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1.5A into the low gate impedance with just 10mA input from a controller. The turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. By defining the switching characteristics appropriately, EMI and cross conduction can be reduced.

The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to ~1ns and rise/fall times down to 14ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.

The ZXGD3005E6 is a high-speed non-inverting single gate driver capable of driving up to 10A into a MOSFET or IGBT gate capacitive load from supply voltages up to 25V. With propagation delay times down to <10ns and correspondingly rise/fall times of <20ns. This gate driver ensures rapid switching of the MOSFET or IGBT to minimize power losses and distortion in high current switching applications. It is ideally suited to act as a voltage buffer between the typically high output impedances of a controller IC and the effectively low impedance on the gate of a power MOSFET or IGBT during switching. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs. The ZXGD3005E6 has separate source and sink outputs that enables the turn-on and turn-off times of the MOSFET or IGBT to be independently control°C. In addition, the wide supply voltage range allows full enhancement of the MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltage to prevent dV/dt induced false triggering of IGBTs. The ZXGD3005E6 has been designed to be inherently rugged to latch-up and shoot-through issues. The optimized pin-out SOT26 package eases board layout, enabling reduced parasitic inductance of traces.

The ZXGD3006E6Q is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load.

40V, 1A, Gate Driver, SOT363

The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. TheseAC-DC convertersare comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET's Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors' output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.

The ZXGD3103 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current low. The detectors’ output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.

The ZXGD3104 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on. The detectors’ output voltage is then proportional to the MOSFET Drain-Source voltage and this is applied to the Gate via the driver. This action provides a rapid MOSFET turn off at zero Drain current.

ZXGD3105N8 synchronous controller is designed for driving a MOSFET as an ideal rectifier. This is to replace a diode for increasing the power transfer efficiency. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors’ output voltage is then proportional to the MOSFET Drain-Source voltage and this is applied to the Gate via the driver. This action provides a rapid MOSFET turn off as Drain current decays to zero.