Analog Devices Inc./Maxim Integrated

The HMC392A is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 17.2 dB of gain, 1.7 dB noise figure, and 32.5 dBm IP3 from a +5V supply voltage. The HMC392A has six bonding adjustment options which allow the user to select the bias point and output power of the device (+10 to +19.7 dBm). The HMC392A amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.3 mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).Applications• Point-to-Point Radios• VSAT• LO Driver for HMC Mixers• Military EW, ECM, C3I• Space

The HMC392ALC4 is a GaAs MMIC Low Noise Amplifier which operates between 3.5 and 8.0 GHz. Housed in a leadless 4x4 mm SMT package, this amplifier provides 17 dB of gain, 1.8 dB noise figure and 34.5 dBm IP3 from a +5V supply voltage. HMC392ALC4 functions well as a low noise front end or as a driver amplifier. The RF Input and Output pins are DC blocked and matched to 50 Ohms for ease of use. The HMC392ALC4 allows the use of surface mount manufacturing techniques and is suitable for high reliability military, industrial and space applications.ApplicationsPoint-to-point radiosVSATLO driver for HMC mixersMilitary EW, ECM, C3ISpace

The HMC395 die is a GaAs InGaP Heterojunction Bi-polar Transistor (HBT) Gain Block MMIC DC - 4 GHz amplifier. This amplifier die can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17dBm output power. The HMC395 offers 16 dB of gain and an output IP3 of +31dBm while requiring only 54mA from a +5V supply.The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC395 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils).ApplicationsMicrowave & VSAT RadiosTest EquipmentMilitary EW, ECM, C³ISpace Telecom

The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply.The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).ApplicationsMicrowave & VSAT RadiosTest EquipmentMilitary EW, ECM, C³ISpace Telecom

The HMC398QS16G(E) is a single chip GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC398QS16G(E) integrates a resonator, negative resistance device, varactor diode and a divide-by-8 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 16 leaded QSOP package with an exposed base for improved RF and thermal performance. The HMC398QS16G(E) requires no external components.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios / LMDSVSAT

The HMC399MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering 700 to 1000 MHz. Excellent input IP3 performance of +35 dBm for down conversion and +32 dBm for up conversion is provided for 2.5G & 3G GSM/ CDMA based cellular applications at an LO drive of +17 dBm. With a 1 dB compression of +23 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 8.5 dB typical and LO isolations are maintained at 23 to 35 dB.This miniature single-ended monolithic GaAs FET mixer requires only one external inductor to optimize the LO frequency response. The 50 to 250 MHz IF frequency response will satisfy many cellular transmit or receive frequency plans. The HMC399MS8(E) input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm² standard IC footprint and no DC bias.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACable Modem Termination Systems

The HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering 1.7 to 2.2 GHz. Excellent input IP3 performance of +36 dBm for down conversion and +29 dBm for up conversion is provided for 2.5G & 3G GSM/CDMA based UMTS or PCS applications at an LO drive of +17dBm. With a 1dB compression of +21 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 8.5dB typical and LO isolations are maintained at 22 to 33 dB.This miniature single-ended monolithic GaAs FET mixer does not require any external components or bias. The 50 to 300 MHz IF frequency response will satisfy many UMTS/PCS transmit or receive frequency plans configured for low side LO. The HMC400MS8(E) input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm² standard IC footprint and no DC bias.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACable Modem Termination Systems