16:[["$","meta","0",{"name":"viewport","content":"width=device-width, initial-scale=1"}],["$","meta","1",{"charSet":"utf-8"}],["$","title","2",{"children":"θ_JA and Ψ_JT | SCS306AGC16 - Rohm Semiconductor | Zenode.ai"}],["$","meta","3",{"name":"description","content":"Browse datasheets and documents for SCS306AGC16 - Rohm Semiconductor. Key specs: Reverse Recovery Time (trr) 0 ns ns, Voltage - DC Reverse (Vr) (Max) 650 V V, Voltage - Forward (Vf) (Max) @ If 1.5 V V, Technology SiC (Silicon Carbide) Schottky, Speed 500 mA mA, Current - Reverse Leakage @ Vr 30 µA µ"}],["$","meta","4",{"name":"keywords","content":"SCS306AGC16, Rohm Semiconductor, Series SCS306AG, Single Diodes, Rectifiers, Diodes, Discrete Semiconductor Products, Reverse Recovery Time (trr), Voltage - DC Reverse (Vr) (Max), Voltage - Forward (Vf) (Max) @ If, Technology, Speed, Current - Reverse Leakage @ Vr, Supplier Device Package, Package / Case, Current - Average Rectified (Io), Capacitance @ Vr, F, Operating Temperature - Junction, Mounting Type, datasheet, specifications, pricing, electronic components"}],["$","meta","5",{"name":"robots","content":"index, follow"}],["$","meta","6",{"name":"googlebot","content":"index, follow, max-image-preview:large, max-snippet:-1"}],["$","meta","7",{"name":"product:mpn","content":"SCS306AGC16"}],["$","meta","8",{"name":"product:brand","content":"Rohm Semiconductor"}],["$","meta","9",{"name":"product:category","content":"Single Diodes, Rectifiers, Diodes, Discrete Semiconductor Products"}],["$","meta","10",{"name":"application/ld+json","content":"$1b"}],["$","meta","11",{"name":"product:series","content":"SCS306AG"}],["$","meta","12",{"property":"og:title","content":"θ_JA and Ψ_JT | SCS306AGC16 - Rohm Semiconductor | Zenode.ai"}],["$","meta","13",{"property":"og:description","content":"Browse datasheets and documents for SCS306AGC16 - Rohm Semiconductor. Key specs: Reverse Recovery Time (trr) 0 ns ns, Voltage - DC Reverse (Vr) (Max) 650 V V, Voltage - Forward (Vf) (Max) @ If 1.5 V V, Technology SiC (Silicon Carbide) Schottky, Speed 500 mA mA, Current - Reverse Leakage @ Vr 30 µA µ"}],["$","meta","14",{"property":"og:site_name","content":"Zenode.ai"}],["$","meta","15",{"property":"og:locale","content":"en_US"}],["$","meta","16",{"property":"og:image","content":"https://cdn.zenode.ai/blobs/documents/503b97ef2feb978c14cabe42b817f7c6a50fdab4cb387c38130dea2c4211fa07.webp"}],["$","meta","17",{"property":"og:image:width","content":"1200"}],["$","meta","18",{"property":"og:image:height","content":"630"}],["$","meta","19",{"property":"og:image:alt","content":"SCS306AGC16 - Rohm Semiconductor"}],["$","meta","20",{"property":"og:image:type","content":"image/webp"}],["$","meta","21",{"property":"og:type","content":"website"}],["$","meta","22",{"name":"twitter:card","content":"summary_large_image"}],["$","meta","23",{"name":"twitter:site","content":"@zenode"}],["$","meta","24",{"name":"twitter:creator","content":"@zenode"}],["$","meta","25",{"name":"twitter:title","content":"θ_JA and Ψ_JT | SCS306AGC16 - Rohm Semiconductor"}],["$","meta","26",{"name":"twitter:description","content":"Browse datasheets and documents for SCS306AGC16 - Rohm Semiconductor. Key specs: Reverse Recovery Time (trr) 0 ns ns, Voltage - DC Reverse (Vr) (Max) 650 V V, Voltage - Forward (Vf) (Max) @ If 1.5 V V, Technology SiC (Silicon Carbide) Schottky, Speed 500 mA mA, Current - Reverse Leakage @ Vr 30 µA µ"}],["$","meta","27",{"name":"twitter:image","content":"https://cdn.zenode.ai/blobs/documents/503b97ef2feb978c14cabe42b817f7c6a50fdab4cb387c38130dea2c4211fa07.webp"}],["$","meta","28",{"name":"twitter:image:alt","content":"SCS306AGC16 - Rohm Semiconductor"}],["$","link","29",{"rel":"icon","href":"/favicon/favicon.ico"}],["$","meta","30",{"name":"next-size-adjust"}]]