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GANB8R0-040CBAZActive
Nexperia USA Inc.
40 V, 8.0 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.7 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
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WLCSP16; Reel dry pack for SMD, 7"; Q2/T3 product orientation
WLCSP16: wafer level chip-size package; 16 bumps (4 x 4)