SI4804 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 5.7A 8SOIC
| Part | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Configuration | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | Logic Level Gate | 22 mOhm | 3 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SOIC | 11 nC | 1.1 W | 5.7 A | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 22 mOhm | 2.4 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SOIC | 3.1 W | 8 A | 865 pF | 23 nC |