SIHG100 Series

Catalog

MOSFET N-CH 600V 30A TO247AC

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG100N60E-GE3	50 nC	100 mOhm	TO-247AC	N-Channel	1851 pF	-55 °C	150 °C	600 V	30 V	TO-247-3	Through Hole	MOSFET (Metal Oxide)	30 A	5 V	208 W	10 V