SIRC10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 60A PPAK SO-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Supplier Device Package | Package / Case | Power Dissipation (Max) | FET Type | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | FET Feature | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 36 nC | Surface Mount | 30 V | 1873 pF | -55 °C | 150 °C | -16 V 20 V | PowerPAK® SO-8 | PowerPAK® SO-8 | 43 W | N-Channel | MOSFET (Metal Oxide) | 3.5 mOhm | 60 A | 2.4 V | Schottky Diode (Body) | 4.5 V 10 V |