IRFD9210 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 200V 400MA 4DIP
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | P-Channel | 10 V | 20 V | -55 °C | 150 °C | 400 mA | 4-DIP (0.300" 7.62mm) | MOSFET (Metal Oxide) | Through Hole | 3 Ohm | 170 pF | 200 V | 1 W | 8.9 nC | 4 V |