IRFSL11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 500V 11A TO262-3
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | -55 °C | 175 ░C | 11 A | MOSFET (Metal Oxide) | 500 V | Through Hole | TO-262-3 | 30 V | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | 190 W | 550 mOhm | 4 V | 51 nC | 1426 pF |