PJW7N06 Series

Catalog

60V N-CHANNEL ENHANCEMENT MODE M

Part	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Qualification	Grade
Panjit International Inc. PJW7N06A_R2_00001	N-Channel	150 °C	-55 °C	TO-261-4 TO-261AA	60 V	20 nC	1173 pF	MOSFET (Metal Oxide)	3.1 W	20 V	34 mOhm	4.5 V 10 V	6.6 A	Surface Mount	2.5 V	SOT-223
Panjit International Inc. PJW7N06A-AU_R2_000A1	N-Channel	175 °C	-55 °C	TO-261-4 TO-261AA	60 V	20 nC	1173 pF	MOSFET (Metal Oxide)		20 V	34 mOhm	4.5 V 10 V	6.6 A	Surface Mount	2.5 V	SOT-223	3.7 W	AEC-Q101	Automotive