SIR668 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 95A PPAK SO-8
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.4 V | 4.8 mOhm | 5400 pF | -55 °C | 150 °C | N-Channel | 20 V | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 104 W | 100 V | 83 nC | 95 A | MOSFET (Metal Oxide) | 10 V | 7.5 V | |
 Vishay General Semiconductor - Diodes Division | 4 V | 4.8 mOhm | 3750 pF | -55 °C | 150 °C | N-Channel | 20 V | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 104 W | 100 V | 93.6 A | MOSFET (Metal Oxide) | 10 V | 7.5 V | 81 nC |