SQ4946 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 60V 7A 8SOIC
| Part | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power - Max [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Drain to Source Voltage (Vdss) | Mounting Type | Qualification | Grade | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Configuration | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 750 pF | 8-SOIC | 4 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Logic Level Gate | 60 V | Surface Mount | AEC-Q101 | Automotive | 8-SOIC | 3.9 mm | 0.154 in | 18 nC | 7 A | 2.5 V | 2 N-Channel (Dual) | 40 mOhm | |
Vishay General Semiconductor - Diodes Division | 865 pF | 8-SOIC | 4 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 60 V | Surface Mount | AEC-Q101 | Automotive | 8-SOIC | 3.9 mm | 0.154 in | 7 A | 2.5 V | 2 N-Channel (Dual) | 40 mOhm | 22 nC | ||
Vishay General Semiconductor - Diodes Division | 750 pF | 8-SOIC | 4 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 60 V | Surface Mount | AEC-Q101 | Automotive | 8-SOIC | 3.9 mm | 0.154 in | 18 nC | 7 A | 2.5 V | 2 N-Channel (Dual) | 40 mOhm |