SI4362 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 29A 8SO
| Part | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 12 V | 4.5 V 10 V | 4800 pF | Surface Mount | 8-SOIC | MOSFET (Metal Oxide) | 115 nC | 2 V | 4.6 mOhm | -55 °C | 150 °C | 29 A | 30 V | 8-SOIC | 3.9 mm | 0.154 in |
Vishay General Semiconductor - Diodes Division | N-Channel | 12 V | 4.5 V 10 V | 4800 pF | Surface Mount | 8-SOIC | MOSFET (Metal Oxide) | 115 nC | 2 V | 4.6 mOhm | -55 °C | 150 °C | 29 A | 30 V | 8-SOIC | 3.9 mm | 0.154 in |