
ISL6613 Series
Manufacturer: Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | Package / Case | Package / Case | Package / Case | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Driven Configuration | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Number of Drivers | Input Type | Channel Type | Package / Case [y] | Package / Case [x] | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 0.154 in | 8-SOIC | 3.9 mm | 1.25 A | 2 A | Half-Bridge | 8-SOIC-EP | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | ||||
Renesas Electronics Corporation | MOSFET (N-Channel) N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 8-SOIC | 1.25 A | 2 A | Half-Bridge | 8-SOIC | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 3.9 mm | 0.154 in | ||||
Renesas Electronics Corporation | MOSFET (N-Channel) N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 0.154 in | 8-SOIC | 3.9 mm | 1.25 A | 2 A | Half-Bridge | 8-SOIC-EP | -40 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 13.2 V | 10.8 VDC | ||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 8-SOIC | 1.25 A | 2 A | Half-Bridge | 8-SOIC | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 3.9 mm | 0.154 in | 13.2 V | 10.8 VDC | ||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 8-SOIC | 1.25 A | 2 A | Half-Bridge | 8-SOIC | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 3.9 mm | 0.154 in | 13.2 V | 10.8 VDC | ||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 0.154 in | 8-SOIC | 3.9 mm | 1.25 A | 2 A | Half-Bridge | 8-SOIC-EP | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | ||||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 0.154 in | 8-SOIC | 3.9 mm | 1.25 A | 2 A | Half-Bridge | 8-SOIC-EP | -40 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 13.2 V | 10.8 VDC | ||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 8-SOIC | 1.25 A | 2 A | Half-Bridge | 8-SOIC | -40 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 3.9 mm | 0.154 in | ||||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 8-SOIC | 1.25 A | 2 A | Half-Bridge | 8-SOIC | -40 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 3.9 mm | 0.154 in | 13.2 V | 10.8 VDC | ||
Renesas Electronics Corporation | N-Channel MOSFET | 18 ns | 26 ns | Surface Mount | 0.154 in | 8-SOIC | 3.9 mm | 1.25 A | 2 A | Half-Bridge | 8-SOIC-EP | 0 °C | 125 ¯C | 2 | Non-Inverting | Synchronous | 13.2 V | 10.8 VDC |