TLP626 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

PHOTOCOUPLER

Part	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Package / Case	Current Transfer Ratio (Max) [Max]	Rise / Fall Time (Typ)	Current - Output / Channel [custom]	Voltage - Output (Max) [Max]	Mounting Type	Turn On / Turn Off Time (Typ)	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) [Max]	Current Transfer Ratio (Min) [Min]	Number of Channels [custom]	Current - DC Forward (If) (Max) [Max]	Output Type	Package / Case	Package / Case	Package / Case [x]	Package / Case [x]
Toshiba Semiconductor and Storage TLP626(D4-LF2,F)	1.15 V	4-DIP	4-DIP (0.400" 10.16mm)	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	1	60 mA	Transistor
Toshiba Semiconductor and Storage TLP626(FANUC,F)	1.15 V	4-DIP	4-DIP	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	1	60 mA	Transistor	0.3 in	7.62 mm
Toshiba Semiconductor and Storage TLP626(LF5,F)	1.15 V	4-DIP	4-DIP	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	1	60 mA	Transistor	0.3 in	7.62 mm
Toshiba Semiconductor and Storage TLP626(LF2,F)	1.15 V	4-DIP	4-DIP (0.400" 10.16mm)	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	1	60 mA	Transistor
Toshiba Semiconductor and Storage TLP626(MAT-LF2,F)	1.15 V	4-DIP	4-DIP (0.400" 10.16mm)	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	1	60 mA	Transistor
Toshiba Semiconductor and Storage TLP626(BV-LF2,F)	1.15 V	4-DIP	4-DIP (0.400" 10.16mm)	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	200 %	1	60 mA	Transistor
Toshiba Semiconductor and Storage TLP626-4(HITOMK,F)	1.15 V	16-DIP	16-DIP	1200 %	8 µs	50 mA	55 V	Through Hole	8 µs 10 µs	100 °C	-55 C	400 mV	100 %	4	50 mA	Transistor			0.3 in	7.62 mm