TPS737-Q1 Series

Automotive 1A ultra-low-dropout voltage regulator with reverse current protection and enable

Catalog

Automotive 1A ultra-low-dropout voltage regulator with reverse current protection and enable

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Quiescent (Iq)	Voltage - Input (Max) [Max]	Output Configuration	Voltage Dropout (Max) [Max]	Package / Case	Grade	Current - Output	Current - Supply (Max) [Max]	Voltage - Output (Min/Fixed)	Number of Regulators	PSRR [Min]	PSRR [Max]	Control Features	Protection Features	Supplier Device Package	Output Type	Qualification	Mounting Type
Texas Instruments TPS73719QDRBRQ1	125 °C	-40 °C	400 µA	5.5 V	Positive	0.5 V	8-VDFN Exposed Pad	Automotive	1 A	1.3 mA	1.9 V	1	37 dB	58 dB	Enable	Over Current Over Temperature Reverse Polarity	8-SON (3x3)	1.81 mOhm	AEC-Q100	Surface Mount
Texas Instruments TPS73733DCQRG4	125 °C	-40 °C	400 µA	5.5 V	Positive	0.5 V	SOT-223-6		1 A	1.3 mA	3.3 V	1	37 dB	58 dB	Enable	Over Current Over Temperature Reverse Polarity	SOT-223-6	1.81 mOhm		Surface Mount
Texas Instruments TPS73733DCQ	125 °C	-40 °C	400 µA	5.5 V	Positive	0.5 V	SOT-223-6		1 A	1.3 mA	3.3 V	1	37 dB	58 dB	Enable	Over Current Over Temperature Reverse Polarity	SOT-223-6	1.81 mOhm		Surface Mount
Texas Instruments TPS73733QDRBRQ1	125 °C	-40 °C	400 µA	5.5 V	Positive	0.5 V	8-VDFN Exposed Pad	Automotive	1 A	1.3 mA	3.3 V	1	37 dB	58 dB	Enable	Over Current Over Temperature Reverse Polarity	8-SON (3x3)	1.81 mOhm	AEC-Q100	Surface Mount
Texas Instruments TPS73733DRVT	125 °C	-40 °C	400 µA	5.5 V	Positive	0.5 V			1 A	1.3 mA	3.3 V	1	37 dB	58 dB	Enable	Over Current Over Temperature Reverse Polarity	6-WSON (2x2)	1.81 mOhm		Surface Mount

Catalog

Automotive 1A ultra-low-dropout voltage regulator with reverse current protection and enable

Key Features

• AEC-Q100 qualified for automotive applications:Temperature grade 1: –40°C to +125°C, TADevice HBM ESD classification level 2Device CDM ESD classification level C4AStable with 1µF or larger ceramic output capacitorInput voltage range: 2.2V to 5.5VUltra-low dropout voltage: 130mV (typical) at 1AExcellent load transient response, even with only 1µF output capacitorNMOS topology delivers low reverse leakage current1% initial accuracy3% overall accuracy over line, load, and temperatureLess than 20nA (typical) quiescent current in shutdown modeThermal shutdown and current limit for fault protectionAvailable in multiple output voltage versionsAEC-Q100 qualified for automotive applications:Temperature grade 1: –40°C to +125°C, TADevice HBM ESD classification level 2Device CDM ESD classification level C4AStable with 1µF or larger ceramic output capacitorInput voltage range: 2.2V to 5.5VUltra-low dropout voltage: 130mV (typical) at 1AExcellent load transient response, even with only 1µF output capacitorNMOS topology delivers low reverse leakage current1% initial accuracy3% overall accuracy over line, load, and temperatureLess than 20nA (typical) quiescent current in shutdown modeThermal shutdown and current limit for fault protectionAvailable in multiple output voltage versions

Description

The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout. The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit. The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout. The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit.