MT48LC4M16A2 Series
Manufacturer: Micron Technology Inc.
Catalog
IC DRAM 64MBIT PARALLEL 54VFBGA
| Part | Technology | Clock Frequency | Memory Organization | Memory Interface | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package | Access Time | Memory Format | Write Cycle Time - Word, Page | Memory Type | Grade | Qualification | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | 0 °C | 70 °C | 54-VFBGA | 54-VFBGA (8x8) | 5.4 ns | DRAM | 15 ns | Volatile | ||||
Micron Technology Inc. | SDRAM | 167 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | -40 ¯C | 85 C | 54-TSOP II | 5.4 ns | DRAM | 12 ns | Volatile | Automotive | AEC-Q100 | |||
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | -40 ¯C | 85 C | 54-VFBGA | 54-VFBGA (8x8) | 5.4 ns | DRAM | 15 ns | Volatile | ||||
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | 0 °C | 70 °C | 54-VFBGA | 54-VFBGA (8x8) | 5.4 ns | DRAM | Volatile | 14 ns | 14 ns | |||
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | 0 °C | 70 °C | 54-VFBGA | 54-VFBGA (8x8) | 5.4 ns | DRAM | Volatile | 14 ns | 14 ns | |||
Micron Technology Inc. | SDRAM | 167 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | -40 ¯C | 85 C | 54-TSOP II | 5.5 ns | DRAM | 12 ns | Volatile | |||||
Micron Technology Inc. | SDRAM | 167 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | 0 °C | 70 °C | 54-TSOP II | 5.5 ns | DRAM | 12 ns | Volatile | |||||
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | 0 °C | 70 °C | 54-TSOP II | 5.4 ns | DRAM | Volatile | 14 ns | 14 ns | ||||
Micron Technology Inc. | SDRAM | 133 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | -40 ¯C | 85 C | 54-TSOP II | 5.4 ns | DRAM | 15 ns | Volatile | |||||
Micron Technology Inc. | SDRAM | 143 MHz | 4M x 16 | Parallel | Surface Mount | 3.6 V | 3 V | 8 MB | -40 ¯C | 85 C | 54-TSOP II | 5.4 ns | DRAM | Volatile | Automotive | AEC-Q100 | 14 ns | 14 ns |