H11B Series

Catalog

OPTOISO 5.3KV DARL W/BASE 6SMD

Part	Voltage - Forward (Vf) (Typ)	Output Type	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Current Transfer Ratio (Min) [Min]	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Voltage - Output (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Number of Channels	Voltage - Isolation	Vce Saturation (Max) [Max]	Current - DC Forward (If) (Max)	Rise / Fall Time (Typ) [Max]	Rise / Fall Time (Typ)	Current - Output / Channel	Current Transfer Ratio (Max)	Package / Case	Package / Case	Package / Case
ON Semiconductor H11B33SD	1.35 V	Darlington with Base	18 µs	25 µs	100 %	Surface Mount	6-SMD	6-SMD Gull Wing	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V
ON Semiconductor H11B1S		Darlington with Base	18 µs	25 µs	500 %	Surface Mount	6-SMD	6-SMD Gull Wing	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V
ON Semiconductor H11B815S		Darlington			600 %	Surface Mount	4-SMD	4-SMD Gull Wing	100 °C	-55 °C	DC	35 V		1		1 V	50 mA	250 µs	300 µs	80 mA	7500 %
ON Semiconductor H11B2300		Darlington with Base	18 µs	25 µs	200 %	Through Hole	6-DIP	6-DIP	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V						0.3 in	7.62 mm
ON Semiconductor H11B255300		Darlington with Base	18 µs	25 µs	100 %	Through Hole	6-DIP	6-DIP	100 °C	-55 °C	DC	55 V	100 mA	1	5300 Vrms	1 V						0.3 in	7.62 mm
ON Semiconductor H11B815W		Darlington			600 %	Through Hole	4-DIP	4-DIP	100 °C	-55 °C	DC	35 V		1		1 V	50 mA	250 µs	300 µs	80 mA	7500 %
ON Semiconductor H11B2		Darlington with Base	18 µs	25 µs	200 %	Through Hole	6-DIP	6-DIP	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V						0.3 in	7.62 mm
ON Semiconductor H11B3S	1.35 V	Darlington with Base	18 µs	25 µs	100 %	Surface Mount	6-SMD	6-SMD Gull Wing	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V
ON Semiconductor H11B815		Darlington			600 %	Through Hole	4-DIP	4-DIP (0.300" 7.62mm)	100 °C	-55 °C	DC	35 V		1		1 V	50 mA	250 µs	300 µs	80 mA	7500 %
ON Semiconductor H11B3300W	1.35 V	Darlington with Base	18 µs	25 µs	100 %	Through Hole	6-DIP	6-DIP	100 °C	-55 °C	DC	25 V	100 mA	1	5300 Vrms	1 V							10.16 mm	10.16 mm