FGL35N120FTD Series

IGBT, 1200V, 35A, Field Stop Trench

Catalog

IGBT, 1200V, 35A, Field Stop Trench

Part	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	IGBT Type	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Test Condition
ON Semiconductor FGL35N120FTDTU	TO-264-3 TO-264AA	Through Hole	1200 V	368 W	34 ns 172 ns	70 A	337 ns	210 nC	Trench Field Stop	105 A	2.2 V	HPM F2	-55 °C	150 °C	1.7 mJ 2500 µJ	10 Ohm 15 V 35 A 600 V
ON Semiconductor FGL35N120FTDTU	TO-264-3 TO-264AA	Through Hole	1200 V	368 W	34 ns 172 ns	70 A	337 ns	210 nC	Trench Field Stop	105 A	2.2 V	TO-264-3	-55 °C	150 °C	1.7 mJ 2500 µJ	10 Ohm 15 V 35 A 600 V

Catalog

IGBT, 1200V, 35A, Field Stop Trench

Key Features

• Field stop trench technology

• High speed switching

• Low saturation voltage: VCE(sat)= 1.68 V @ IC= 35A

• High input impedance

Description

Using advanced field stop trench IGBT technology, ON Semiconductor’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.