SI5933 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 20V 2.7A 1206-8
| Part | Configuration | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | FET Feature | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2 P-Channel | 110 mOhm | Surface Mount | 1 V | 1206-8 ChipFET™ | Logic Level Gate | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2.7 A | 7.7 nC | 20 V | 1.1 W | ||
Vishay General Semiconductor - Diodes Division | 2 P-Channel | 144 mOhm | Surface Mount | 1 V | 1206-8 ChipFET™ | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3.7 A | 20 V | 2.8 W | 6.8 nC | 276 pF |