PHT6NQ10 Series
Manufacturer: Nexperia USA Inc.
Beta
⌘K
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | Mounting Type | Technology | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3 A | 100 V | 8.3 W | 1.8 W | 21 nC | TO-261-4 TO-261AA | 20 V | Surface Mount | MOSFET (Metal Oxide) | SOT-223 | 150 °C | -65 °C | 633 pF | N-Channel | 90 mOhm | 10 V |