VS-3C12 Series

Catalog

650 V POWER SIC GEN 3 MERGED PIN

Part	Mounting Type	Package / Case	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division VS-3C12ET07T-M3	Through Hole	TO-220-2	12 A	SiC (Silicon Carbide) Schottky	535 pF	TO-220AC	500 mA	175 ░C	-55 °C	650 V	65 µA	1.5 V	0 ns
Vishay General Semiconductor - Diodes Division VS-3C12ET07S2L-M3	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	12 A	SiC (Silicon Carbide) Schottky	535 pF	TO-263AB (D2PAK)	500 mA	175 ░C	-55 °C	650 V	65 µA	1.5 V	0 ns