NDS940 Series

Catalog

MOSFET P-CH 20V 4.3A 8SOIC

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor NDS9405	40 nC	3 V	20 V	2.5 W	1425 pF	4.3 A	8-SOIC	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	8-SOIC	3.9 mm	0.154 in	Surface Mount	20 V
ON Semiconductor NDS9405	40 nC	3 V	20 V	2.5 W	1425 pF	4.3 A	8-SOIC	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	8-SOIC	3.9 mm	0.154 in	Surface Mount	20 V