FDP2710_F085 Series

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Grade	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Qualification	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FDP2710-F085	47 mOhm	TO-220-3	Automotive	Through Hole	5 V	30 V	TO-220-3	5690 pF	10 V	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	101 nC	4 A	250 V	-55 °C	150 °C	403 W
ON Semiconductor FDP2710	42.5 mOhm	TO-220-3		Through Hole	5 V	30 V	TO-220-3	7280 pF	10 V	MOSFET (Metal Oxide)		N-Channel	101 nC	50 A	250 V	-55 °C	150 °C	260 W

Catalog

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Key Features

• Typ rDS(on)= 38mΩ at VGS= 10V, ID= 50A

• Typ Qg(TOT)= 78nC at VGS= 10V

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.