SIHG24 Series

Catalog

MOSFET N-CH 650V 24A TO247AC

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHG24N65E-GE3	Through Hole	2740 pF	145 mOhm	122 nC	MOSFET (Metal Oxide)	N-Channel	24 A	-55 °C	150 °C	10 V	650 V	TO-247AC	TO-247-3	30 V	4 V	250 W
Vishay General Semiconductor - Diodes Division SIHG24N65EF-GE3	Through Hole	2774 pF	156 mOhm	122 nC	MOSFET (Metal Oxide)	N-Channel	24 A	-55 °C	150 °C	10 V	650 V	TO-247AC	TO-247-3	30 V	4 V	250 W
Vishay General Semiconductor - Diodes Division SIHG24N65E-E3	Through Hole	2740 pF	145 mOhm	122 nC	MOSFET (Metal Oxide)	N-Channel	24 A	-55 °C	150 °C	10 V	650 V	TO-247AC	TO-247-3	30 V	4 V	250 W