MC14023B Series

Triple 3-Input NAND Gate

Catalog

Triple 3-Input NAND Gate

Part	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Logic Level - High [Max]	Input Logic Level - High [Min]	Package / Case [x]	Package / Case [y]	Package / Case	Max Propagation Delay @ V, Max CL	Current - Quiescent (Max) [Max]	Number of Circuits	Mounting Type	Logic Type	Number of Inputs	Operating Temperature [Min]	Operating Temperature [Max]	Input Logic Level - Low [Min]	Input Logic Level - Low [Max]	Supplier Device Package
ON Semiconductor MC14023BDR2	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.154 in	3.9 mm	14-SOIC	100 ns	1 çA	3	Surface Mount	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V
ON Semiconductor MC14023BFELG	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.209 "	5.3 mm	14-SOIC	100 ns	1 çA	3	Surface Mount	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V	SOEIAJ-14
ON Semiconductor NLV14023BDR2G	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.154 in	3.9 mm	14-SOIC	100 ns	1 çA	3	Surface Mount	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V
ON Semiconductor MC14023BCPG	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.3 "	7.62 mm	14-DIP	100 ns	1 çA	3	Through Hole	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V
ON Semiconductor MC14023BD	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.154 in	3.9 mm	14-SOIC	100 ns	1 çA	3	Surface Mount	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V
ON Semiconductor MC14023BDG	8.8 mA	8.8 mA	18 V	3 V	11 V	3.5 V	0.154 in	3.9 mm	14-SOIC	100 ns	1 çA	3	Surface Mount	NAND Gate	3	-55 °C	125 °C	1.5 V	4 V

Catalog

Triple 3-Input NAND Gate

Key Features

• Supply Voltage Range = 3.0 Vdc to 18 Vdc

• All Outputs Buffered

• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.

• Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B

• Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices

• Pb-Free Packages are Available*

Description

The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.