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MJD18002D2 Series

Bipolar NPN Transistor

Manufacturer: ON Semiconductor

Catalog

Bipolar NPN Transistor

Key Features

Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC= 100 mA
Extremely Low Storage Time Min/Max GuaranteesDue to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCEsat
Characteristics Make It Suitable for PFC Application
"6 Sigma" Process Providing Tightand Reproductible Parameter SpreadsTwo Versions:
MJD18002D2-1: Case 369 for Insertion Mode
MJD18002D2: Case 369A for Surface Mount Mode
Pb-Free Package is Available