Catalog
Bipolar NPN Transistor
Key Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC= 100 mA
• Extremely Low Storage Time Min/Max GuaranteesDue to the H2BIP Structure which Minimizes the Spread
• Integrated Collector-Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCEsat
• Characteristics Make It Suitable for PFC Application
• "6 Sigma" Process Providing Tightand Reproductible Parameter SpreadsTwo Versions:
• MJD18002D2-1: Case 369 for Insertion Mode
• MJD18002D2: Case 369A for Surface Mount Mode
• Pb-Free Package is Available