TSM650 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CH 150V 24A 8PDFN
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Package / Case | Mounting Type | Power Dissipation (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 V | 36 nC | 8-PDFN (5x6) | MOSFET (Metal Oxide) | 8-PowerTDFN | Surface Mount | 96 W | N-Channel | 24 A | 65 mOhm | 150 °C | -55 °C | 20 V | 6 V 10 V | 4 V | 1829 pF | |||
Taiwan Semiconductor Corporation | 150 V | 8-SOP | MOSFET (Metal Oxide) | 8-SOIC | Surface Mount | N-Channel | 9 A | 65 mOhm | 150 °C | -55 °C | 20 V | 6 V 10 V | 4 V | 1783 pF | 0.154 in | 3.9 mm | 12.5 W |