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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Technology | FET Type | Package / Case | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | MOSFET (Metal Oxide) | N-Channel | 3-XFDFN | 500 mW | 56 pF | -55 °C | 150 °C | 1 A | 1.8 V 4.5 V | Surface Mount | 20 V | 12 V | 900 mV | 400 mOhm | 1.3 nC |
 Diodes Inc | MOSFET (Metal Oxide) | N-Channel | 3-XFDFN | 500 mW | 56 pF | -55 °C | 150 °C | 1 A | 1.8 V 4.5 V | Surface Mount | 20 V | 12 V | 900 mV | 400 mOhm | 1.3 nC |