ECH8102 Series

Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8

Catalog

Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor ECH8102-TL-H	Surface Mount	100 nA	135 mV	150 °C	1.6 W	8-ECH	140 MHz	PNP	12 A	200	30 V

Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8

• Adoption of FBET, MBIT process

• Low collector-to-emitter saturation voltage

• High allowable power dissipation

• High current capacitance

• High speed switching

• Halogen free compliance

• IECO is guaranteed for preventing reverse fl ow from the collector to the emitter

ECH8102 is Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8 for High-Current Switching Applications.