NVTFWS012P03P8Z Series

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ, -11.7 A

Catalog

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ, -11.7 A

Part	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Qualification	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NVTFWS012P03P8ZTAG	8-PowerWDFN	860 mW	-55 °C	175 ░C	Automotive	30 V	Surface Mount	1535 pF	MOSFET (Metal Oxide)	25 V	7 A	8-WDFN (3.3x3.3)	11.3 mOhm	AEC-Q101	4.5 V 10 V	P-Channel	36 nC	3 V

Catalog

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ, -11.7 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVTFWS015P03P8ZTAG − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.