2SJ380 Series

Catalog

MOSFET P-CH 100V 12A TO220NIS

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Supplier Device Package	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage 2SJ380(F)	Through Hole	12 A	35 W	210 mOhm	MOSFET (Metal Oxide)	TO-220-3 Full Pack	4 V	10 V	48 nC	150 °C	TO-220NIS	P-Channel	20 V	2 V	1100 pF	100 V