P2N2907A Series

Transistor Silicon Plastic PNP

Catalog

Transistor Silicon Plastic PNP

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case
ON Semiconductor P2N2907ARL1G	200 MHz	10 nA	-55 °C	150 °C	60 V	PNP	100	TO-92	TO-226	625 mW	1.6 V	600 mA	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor P2N2907A	200 MHz	10 nA	-55 °C	150 °C	60 V	PNP	100	TO-92	TO-226	625 mW	1.6 V	600 mA	Through Hole	TO-226-3 TO-92-3 Long Body
ON Semiconductor P2N2907AZL1	200 MHz	10 nA	-55 °C	150 °C	60 V	PNP	100	TO-92	TO-226	625 mW	1.6 V	600 mA	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor P2N2907AZL1G	200 MHz	10 nA	-55 °C	150 °C	60 V	PNP	100	TO-92	TO-226	625 mW	1.6 V	600 mA	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor P2N2907ARL1	200 MHz	10 nA	-55 °C	150 °C	60 V	PNP	100	TO-92	TO-226	625 mW	1.6 V	600 mA	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body

Transistor Silicon Plastic PNP

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ= 150 C) Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 217 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds

• Shipped in 16 mm Tape and Reel, 2500 units per reel

• Polarity: Notch in Plastic Body Indicates Cathode Lead

• Marking: U3D, U3J

• These are Pb-Free Devices

PNP Silicon