YQ1MM10ATF Series
Trench MOS Structure, 100V, 1A, SOD-123FL, Highly Efficient SBD for Automotive
Manufacturer: Rohm Semiconductor
Catalog
Trench MOS Structure, 100V, 1A, SOD-123FL, Highly Efficient SBD for Automotive
| Part | Technology | Current - Average Rectified (Io) | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Grade | Speed | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Schottky | 1 A | Surface Mount | 100 V | AEC-Q101 | 620 mV | PMDE | Automotive | 200 mA 500 ns | 50 pF | 10 µA | 175 °C | 2-SMD Flat Leads |
Description
AI
The YQ1MM10ATF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.