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CPC3960

CPC3960 Series

N-CH DEPL MOSFET 600V 44 OHM SOT-223 TR

Catalog

N-CH DEPL MOSFET 600V 44 OHM SOT-223 TR

Key Features

• Device Normally On
• High Breakdown Voltage
• Low On-Resistance
• Low VGS (off) Voltage
• Low On-Resistance at Cold Temperatures
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size: SOT-23, SOT-89 & SOT-223

Description

AI
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.