Catalog
650V 4A TO-263, High-speed switching Power MOSFET
Description
AI
R6504KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Beta
⌘K
650V 4A TO-263, High-speed switching Power MOSFET
650V 4A TO-263, High-speed switching Power MOSFET
| Part | Package / Case | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 650 V | 4 A | 270 pF | 1.05 Ohm | LPTS | 10 nC | N-Channel | Surface Mount | 10 V | 58 W | 150 °C | 20 V | 5 V |