FCH029N65S3 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case
ON Semiconductor FCH029N65S3-F155	75 A	29 mOhm	Through Hole	-55 °C	150 °C	30 V	650 V	463 W	N-Channel	6340 pF	MOSFET (Metal Oxide)	201 nC	4.5 V	TO-247-3	TO-247-3

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247

Key Features

• 700 V @ TJ= 150°C

• Ultra Low Gate Charge (Typ. Qg= 201 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 1615 pF)

• Typ. RDS(on)= 23.7 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.