MBR140ESF Series

1.0 A, 40 V, Schottky Rectifier Low Leakage

Catalog

1.0 A, 40 V, Schottky Rectifier Low Leakage

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Package / Case	Mounting Type	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MBR140ESFT3G	560 mV	200 mA 500 ns	SOD-123F	Surface Mount	SOD-123FL	Schottky	40 V	1 A	175 ░C	-55 C

Catalog

1.0 A, 40 V, Schottky Rectifier Low Leakage

Key Features

• Guardring for Stress Protection

• Low Reverse Leakage

• 175C Operating Junction Temperature

• Epoxy Meets UL 94 V0 @ 0.125 in

• Package Designed for Optimal Automated Board Assembly

• ESD Rating: (Human Body Model = 3B, Machine Model = M4)

• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.