FCU4300N80Z Series
Power MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 1.6 A, 4.3 Ω, IPAK
Manufacturer: ON Semiconductor
Catalog
Power MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 1.6 A, 4.3 Ω, IPAK
| Part | Mounting Type | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | Through Hole | 27.8 W | 4.3 Ohm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | IPAK | 355 pF | 1.6 A | 800 V | MOSFET (Metal Oxide) | 8.8 nC | IPAK TO-251-3 Short Leads TO-251AA | N-Channel |
ON Semiconductor | Through Hole | 27.8 W | 4.3 Ohm | -55 °C | 150 °C | 10 V | 4.5 V | 20 V | IPAK | 355 pF | 1.6 A | 800 V | MOSFET (Metal Oxide) | 8.8 nC | IPAK TO-251-3 Short Leads TO-251AA | N-Channel |
Key Features
• RDS(on)= 3.4 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg= 6.8 nC)
• Low Eoss(Typ. 0.8 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 36 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Description
AI
SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.