IRFBC20 Series

Catalog

MOSFET N-CH 600V 2.2A TO220AB

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFBC20	600 V	2.2 A	TO-220AB	50 W	-55 °C	150 °C	350 pF	N-Channel	20 V	4.4 Ohm	18 nC	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	TO-220-3
Vishay General Semiconductor - Diodes Division IRFBC20PBF-BE3	600 V	2.2 A	TO-220AB	50 W	-55 °C	150 °C	350 pF	N-Channel	20 V	4.4 Ohm	18 nC	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	TO-220-3
Vishay General Semiconductor - Diodes Division IRFBC20SPBF	600 V	2.2 A	TO-263 (D2PAK)		-55 °C	150 °C	350 pF	N-Channel	20 V	4.4 Ohm	18 nC	MOSFET (Metal Oxide)	4 V	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 50 W
Vishay General Semiconductor - Diodes Division IRFBC20S	600 V	2.2 A	TO-263 (D2PAK)		-55 °C	150 °C	350 pF	N-Channel	20 V	4.4 Ohm	18 nC	MOSFET (Metal Oxide)	4 V	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 50 W