MJE802 Series

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

Catalog

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor MJE803G	80 V	2.8 V	TO-126	750	100 µA	TO-126-3 TO-225AA	Through Hole	40 W	4 A	-55 °C	150 °C

Catalog

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain -hFE= 2000 (Typ) @ IC= 2.0 Adc

• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication

• Choice of Packages -MJE700 and MJE800 series

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.