SQJ460 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 58A PPAK SO-8
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Grade | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 106 nC | 60 V | 20 V | Surface Mount | N-Channel | 58 A | 2.5 V | 8.7 mOhm | PowerPAK® SO-8 | -55 °C | 175 ░C | AEC-Q101 | 68 W | 2654 pF | 4.5 V 10 V | Automotive | PowerPAK® SO-8 |