DS1258Y Series
Manufacturer: Analog Devices Inc./Maxim Integrated
IC NVSRAM 2MBIT PARALLEL 40EDIP
| Part | Access Time | Package / Case | Package / Case | Package / Case | Memory Format | Memory Type | Supplier Device Package | Technology | Memory Interface | Operating Temperature [Min] | Operating Temperature [Max] | Memory Organization [custom] | Mounting Type | Write Cycle Time - Word, Page [y] | Write Cycle Time - Word, Page [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 100 ns | 40-DIP Module | 0.61 in | 15.495 mm | NVSRAM | Non-Volatile | 40-EDIP | NVSRAM (Non-Volatile SRAM) | Parallel | 0 °C | 70 °C | 128 K | Through Hole | 100 ns | 100 ns | 5.5 V | 4.5 V | 2 Gbit | |
Analog Devices Inc./Maxim Integrated | 100 ns | 40-DIP Module | 0.61 in | 15.495 mm | NVSRAM | Non-Volatile | 40-EDIP | NVSRAM (Non-Volatile SRAM) | Parallel | 0 °C | 70 °C | 128 K | Through Hole | 100 ns | 100 ns | 5.5 V | 4.5 V | 2 Gbit | |
Analog Devices Inc./Maxim Integrated | 70 ns | 40-DIP Module | 0.61 in | 15.495 mm | NVSRAM | Non-Volatile | 40-EDIP | NVSRAM (Non-Volatile SRAM) | Parallel | 0 °C | 70 °C | 128 K | Through Hole | 5.5 V | 4.5 V | 2 Gbit | 70 ns | ||
Analog Devices Inc./Maxim Integrated | 70 ns | 40-DIP Module | 0.61 in | 15.495 mm | NVSRAM | Non-Volatile | 40-EDIP | NVSRAM (Non-Volatile SRAM) | Parallel | 0 °C | 70 °C | 128 K | Through Hole | 5.5 V | 4.5 V | 2 Gbit | 70 ns |