NTD5865N Series

Power MOSFET 40V 75A 7.2 mOhm Single N-Channel DPAK

Catalog

Power MOSFET 40V 75A 7.2 mOhm Single N-Channel DPAK

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTD5803NT4G	83 W	76 A	3220 pF	DPAK	3.5 V	10 V	5 V	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.2 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Surface Mount	51 nC	N-Channel
ON Semiconductor NTD5865NT4G	71 W	43 A		DPAK	4 V			60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Surface Mount		N-Channel	23 nC	18 mOhm	1261 pF	10 V
ON Semiconductor NTD5862N-1G	115 W	98 A	6000 pF	DPAK	4 V			60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.7 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Surface Mount	82 nC	N-Channel				10 V
ON Semiconductor NTD5862NT4G	115 W	98 A	6000 pF	DPAK	4 V			60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.7 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Surface Mount	82 nC	N-Channel				10 V

Catalog

Power MOSFET 40V 75A 7.2 mOhm Single N-Channel DPAK

Key Features

• Low RDS(on)

• High current capability

• 100% avalanche tested

• Pb-free, Halide-free

Description

The NTD58xxN series are 40V Trench N-Channel power MOSFET ideal for use in Automotive, LCD Backlight, LED drivers, and power supply secondaries, where RDS(on) performance and industry standard packaging are important.