SI5482 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 12A PPAK
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® ChipFET™ Single | 30 V | 51 nC | 12 A | 4.5 V 10 V | Surface Mount | 2 V | 15 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 12 V | 1610 pF | N-Channel | 3.1 W 31 W | PowerPAK® ChipFET™ Single |