
Catalog
2-ch, 4-input, 2-V to 5.5-V NAND gates
Key Features
• Operation of 2V to 5.5V VCCMax tpd of 6ns at 5VTypical VOLP (output ground bounce) < 0.8V at VCC = 3.3V, TA = 25°CTypical VOHV (output VOH undershoot) > 2.3V at VCC = 3.3V, TA = 25°CIoff supports partial-power-down mode operationLatch-up performance exceeds 100mA per JESD 78, Class IIOperation of 2V to 5.5V VCCMax tpd of 6ns at 5VTypical VOLP (output ground bounce) < 0.8V at VCC = 3.3V, TA = 25°CTypical VOHV (output VOH undershoot) > 2.3V at VCC = 3.3V, TA = 25°CIoff supports partial-power-down mode operationLatch-up performance exceeds 100mA per JESD 78, Class II
Description
AI
These dual 4-input positive-NAND gates are designed for 2V to 5.5V VCC operation.
These dual 4-input positive-NAND gates are designed for 2V to 5.5V VCC operation.