NTBL075N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTBL075N065SC1	650 V	139 W	-55 °C	175 ░C	4.3 V	8-HPSOF	59 nC	85 mOhm	SiC (Silicon Carbide Junction Transistor)	1191 pF	Surface Mount	37 A	N-Channel	8-PowerSFN	15 V 18 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL

Key Features

• Max Junction Temperature 175°C

• Leadless thin SMD package

• Kelvin Source Configuration

• Ultra Low Gate Charge (Qg(tot) = 59 nC)

• Low Effective Output Capacitance (Coss = 109 pF)

• Zero reverse recovery current of body diode

• Typ. RDS(on)= 57 mΩ @ Vgs : 18V

• 650V rated

• 100% Avalanche Tested

• Pb−Free, Halogen Free/BFR Free and RoHS Compliant

• Moisture Sensitivity Level 1 guarantee

• Internal Gate Resistance: 5.6 Ω

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).