SQ4949 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 30V 7.5A 8SOIC
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Mounting Type | Vgs(th) (Max) @ Id | Configuration | Qualification | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Grade | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 30 nC | MOSFET (Metal Oxide) | Surface Mount | 2.5 V | 2 P-Channel | AEC-Q101 | 7.5 A | 30 V | Automotive | 3.3 W | 35 mOhm | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 175 ░C | 1020 pF |